Manipulating Coherent Plasmon-Exciton Interaction in a Single Silver Nanorod on Monolayer WSe2

被引:289
|
作者
Zheng, Di [1 ,2 ]
Zhang, Shunping [1 ,2 ]
Deng, Qian [1 ,2 ]
Kang, Meng [1 ,2 ]
Nordlander, Peter [1 ,2 ,4 ,5 ]
Xu, Hongxing [1 ,2 ,3 ]
机构
[1] Wuhan Univ, Ctr Nanosci & Nanotechnol, Sch Phys & Technol, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China
[3] Wuhan Univ, Inst Adv Studies, Wuhan 430072, Peoples R China
[4] Rice Univ, Dept Phys & Astron, Dept Elect & Comp Engn, Houston, TX 77005 USA
[5] Rice Univ, Lab Nanophoton, Houston, TX 77005 USA
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Strong coupling plexciton; exciton; plasmonics; nanocavity; transition metal dichacogenides; ROOM-TEMPERATURE; POLARITONS; TRANSITION;
D O I
10.1021/acs.nanolett.7b01176
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Strong coupling between plasmons and excitons in nanocavities can result in the formation of hybrid-plexCitonic states. Understanding the dispersion relation of plexcitons is important both for fundamental quantum science and for applications including optoelectronics and nonlinear optics devices. The conventional approach, based on statistics. over-different nanocavities, suffers from large inhornogeneities from the samples, owing to the nonuniformity of nanocavities and-the lack of control over the locations and orientations of the;excitons. Here we report the first measurement of the dispersion-relationship of plexcitons in an individual nanocavity-using a single silver nanorod as a Fabry-Perot nanocavity, we realize, strong coupling of plasmon in single nanocavity with excitons in a single atomic layer of tungsten diselenide. The plexardil dispersion is measured by in situ redshifting the plasmon energy via successive deposition of a dielectric layer. Room-temperature foam-hen of plexcitons with Rabi splittings as large as 49.5-meV-is observed. The realization of strong plasmon exciton coupling-by in situ tuning of the plasmon provides a novel route for the manipulation of excitons in semiconductors.
引用
收藏
页码:3809 / 3814
页数:6
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