Thermoelectric measurements of high-resistance Janus monolayer transition-metal dichalcogenide

The broken reflection symmetry exhibited by the recently reported two-dimensional Janus SMoSe monolayers can lead to unique electronic, thermal, and thermoelectric properties. Thermoelectric measurements of these and other semiconducting materials are often complicated by a loading error associated with a high sample resistance. Here, we report a thermoelectric measurement of a monolayer SMoSe sample with a resistance exceeding 40 MO. The loading error associated with the high sample resistance and other contaminations is removed with the use of high-impedance electronics, discrete modulated heating, and Fourier transform analysis of the measured thermoelectric voltage. Under a 20 V gate voltage, the measured Seebeck coefficient of the Janus monolayer changes from -200 mu V/K at 350 K to -220 mu V/K at 425 K. These results are consistent with an n-type semiconductor behavior of the Janus monolayer sample and demonstrate the effectiveness of this method for thermoelectric measurements of high-resistance semiconductor samples. Published under license by AIP Publishing.