A study of deep defect levels in semi-insulating SiC using optical admittance spectroscopy

被引：2
|
作者：
Lee, Wonwoo [1 ]
Zvanut, M. E. [1 ]
机构：
[1] Univ Alabama, Dept Phys, Birmingham, AL 35294 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2007年 / 36卷 / 06期
基金：
美国国家科学基金会;
关键词：
semi-insulating (SI) SiC; optical admittance spectroscopy (OAS); vanadium-doped SiC;
D O I：
10.1007/s11664-007-0100-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical admittance spectroscopy (OAS), supported by electron paramagnetic resonance (EPR) measurements, is used to identify the controversial vanadium acceptor levels in vanadium-doped semi-insulating (SI) 4H-SiC and 6H-SiC. The V3+/4+ levels for the cubic site are likely located at Ec - 0.67 +/- 0.02 eV and E-c - 0.70 +/- 0.02 eV in 6H-SiC and E-c - 0.75 +/- 0.02 eV in 4H-SiC. A peak at 0.87 +/- 0.02 eV in the 6H-SiC is tentatively assigned to the same transition at the hexagonal site and the associated transition in 4H-SiC is thought to occur near 0.94 eV. All assignments are supported by the observation of V3+ in the EPR spectrum.
引用
收藏
页码：623 / 628
页数：6
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