Optimization of Etching Conditions for Site-Controlled Tunnel Pits with High Aspect Ratios in Al Foil

被引:19
|
作者
Fukushima, Tatsuro [1 ]
Nishio, Kazuyuki [1 ]
Masuda, Hideki [1 ]
机构
[1] Tokyo Metropolitan Univ, Dept Appl Chem, Tokyo 1920397, Japan
关键词
aluminium; anodes; electrochemical electrodes; electrolytes; etching; foils; SCANNING ELECTRON MICROSCOPE; MATHEMATICAL-MODEL; ETCHED ALUMINUM; KINETIC-MODEL; MASKING FILM; GROWTH; CAPACITORS; PASSIVATION; MORPHOLOGY; BEHAVIOR;
D O I
10.1149/1.3308594
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The most appropriate conditions in the site-controlled anode etching of Al using a mask film for the formation of tunnel pits with high aspect ratios over 20 were examined. Anode etching under a reducing current density at an appropriate ratio against time (200 mA cm(-2) s(-1)) was effective for the suppression of the undesirable lateral dissolution of the Al surface. Moreover, the addition of a small amount of H(2)SO(4) to HCl electrolyte increased the depth of the obtained tunnel pits. By adopting the appropriate anode etching conditions, these improvements could generate site-controlled deep tunnel pits with depths of over 50 mu m.
引用
收藏
页码:C137 / C139
页数:3
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