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Optimization of Etching Conditions for Site-Controlled Tunnel Pits with High Aspect Ratios in Al Foil
被引:19
|作者:
Fukushima, Tatsuro
[1
]
Nishio, Kazuyuki
[1
]
Masuda, Hideki
[1
]
机构:
[1] Tokyo Metropolitan Univ, Dept Appl Chem, Tokyo 1920397, Japan
关键词:
aluminium;
anodes;
electrochemical electrodes;
electrolytes;
etching;
foils;
SCANNING ELECTRON MICROSCOPE;
MATHEMATICAL-MODEL;
ETCHED ALUMINUM;
KINETIC-MODEL;
MASKING FILM;
GROWTH;
CAPACITORS;
PASSIVATION;
MORPHOLOGY;
BEHAVIOR;
D O I:
10.1149/1.3308594
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
The most appropriate conditions in the site-controlled anode etching of Al using a mask film for the formation of tunnel pits with high aspect ratios over 20 were examined. Anode etching under a reducing current density at an appropriate ratio against time (200 mA cm(-2) s(-1)) was effective for the suppression of the undesirable lateral dissolution of the Al surface. Moreover, the addition of a small amount of H(2)SO(4) to HCl electrolyte increased the depth of the obtained tunnel pits. By adopting the appropriate anode etching conditions, these improvements could generate site-controlled deep tunnel pits with depths of over 50 mu m.
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页码:C137 / C139
页数:3
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