Effect of substrate tilt on sputter-deposited AuTa films

被引:16
|
作者
Engwall, A. M. [1 ]
Aji, L. B. Bayu [1 ]
Baker, A. A. [1 ]
Shin, S. J. [1 ]
Bae, J. H. [2 ]
McCall, S. K. [1 ]
Moody, J. D. [1 ]
Kucheyev, S. O. [1 ]
机构
[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
[2] Gen Atom, San Diego, CA 92186 USA
关键词
PVD; Thin films; Thin film deposition; Monte Carlo methods; Gold-tantalum; Oblique angle deposition; THIN-FILMS; MICROSTRUCTURE; SIMULATION; STRESS; YIELDS;
D O I
10.1016/j.apsusc.2021.149010
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Gold-tantalum alloy films are of interest for biomedical and magnetically-assisted inertial confinement fusion applications. However, growth mechanisms of such Au-Ta alloy films are not well understood. Here, we systematically study the effect of substrate tilt on properties of films deposited by direct current magnetron sputtering from a AuTa alloy target. Experimental data is correlated with distributions of landing energies and incident angles of sputtered and backscattered species calculated by Monte Carlo simulations of ballistic collisions and gas phase atomic transport. Results reveal that the deposition rate and film density monotonically decrease with increasing substrate tilt. Properties are similar for films with a tilt of 40. and below: films are amorphous, with an average compressive stress of 0.5 GPa, a density of 16 g/cm(3), and electrical resistivity of 200 mu Omega cm. The critical substrate tilt angle for the onset of porosity, a transition to a reduced stress state, and an increase in electrical resistivity lies between 40 and 60 degrees. Based on Monte Carlo simulations, these changes in film properties are correlated with an increase in the average impact angle of the ballistic component of atomic flux. Implications of these results to deposition onto non-planar substrates are discussed.
引用
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页数:7
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