Extremely stretchable all-carbon-nanotube transistor on flexible and transparent substrates

被引:0
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作者
Xia, Minggang [1 ,2 ]
Cheng, Zhaofang [1 ,3 ]
Han, Jinyun [1 ,3 ]
Zhang, Shengli [1 ,3 ]
机构
[1] Xi An Jiao Tong Univ, Lab Nanostruct & Phys Properties, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R China
[2] Xi An Jiao Tong Univ, Dept Opt Informat Sci Technol, Sch Sci, Xian 710049, Shaanxi, Peoples R China
[3] Xi An Jiao Tong Univ, Sch Sci, Dept Appl Phys, Xian 710049, Shaanxi, Peoples R China
关键词
THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; INTEGRATED-CIRCUITS; GATE DIELECTRICS; HIGH-PERFORMANCE; MECHANICS;
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
The response of carbon-nanotube (CNT) transistors to large tensile strains has not been studied because of lack of stretchable devices. In this letter, we fabricate extremely stretchable single-wall CNT (SWCNT) conductive coatings on flexible and transparent elastomer substrates. We then measure the mechanical and electrical properties of the coatings and found excellent stretchability (Poisson ratio approximate to 0.31). The sheet resistances of the coatings remain largely unchanged under a large tensile strain. We then construct an active transistor on SWCNT thin films, which serve as active channel and electrodes, with polydimethylsiloxane thin film as the gate dielectric layer. The transistor exhibits excellent mechanical stability, showing no noticeable change (less than 5%) in electrical performance up to a large strain of 22.5%. The stretchable SWCNT thin-film transistor exhibits a current on-off ratio of similar to 50 and field-effect mobility of similar to 24 cm(2) V-1 s(-1), with 75% transmissivity in visible wavelength. We also found that on-off ratio increases with increased stretch strain, while mobility initially increases and then decreases with increased stretch strain. (C) 2014 AIP Publishing LLC.
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页数:5
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