Modeling and Comparison of Switching Loss between SiC MOSFETs with Current Source and Voltage Source Gate Driver

Previous research showed that the switching loss of SiC MOSFET (SM) with current source driver (CSD) is lower than that with voltage source driver (CSD). But sometimes the switching loss of SM with CSD is higher than that with VSD. This paper constructs an evaluation index K through theoretical derivation to compare the switching loss between SiC MOSFETs(SMs) with CSD and VSD under different conditions. K is the ratio of current injected into the gate of the SM during the Miller platform stage between CSD and VSD. When the load is determined, the charging current of CSD and the gate driving resistance of VSD greatly affect the value of K, thereby affecting the switching loss between SIC MOSFETs with CSD and VSD, which is verified by double pulse test (DPT).