Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process

被引：37

作者：

Nihei, Mizuhisa ^{[1
]}

Hyakushima, Takashi ^{[1
]}

Sato, Shintaro ^{[1
]}

Nozue, Tatsuhiro ^{[1
]}

Norimatsu, Masaaki ^{[1
]}

Mishima, Miho ^{[1
]}

Murakami, Tomo ^{[1
]}

Kondo, Daiyu ^{[1
]}

Kawabata, Akio ^{[1
]}

Ohfuti, Mari ^{[1
]}

Awano, Yuji ^{[1
]}

机构：

[1] MIRAI, Semicond Leading Edge Elect Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan

来源：

PROCEEDINGS OF THE IEEE 2007 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2007年

关键词：

D O I：

10.1109/IITC.2007.382390

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We studied the electrical properties of a carbon nanotube (CNT) via interconnect fabricated by a novel damascene process which is mostly compatible with conventional Cu interconnects. It was found that the resistance of 60-nm-height vias was independent of temperatures as high as 423K, which suggests that the carrier transport is ballistic. The obtained resistance of 0.05 Omega for 2.8-mu m-diameter vias is the lowest value ever reported. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 run, which is similar to the via height predicted for 32-nm technology node (year 2013). This indicates that it will be possible to realize CNT vias with ballistic transport for 32-nm technology node and below.

引用

页码：204 / +

页数：2

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