Spatially resolved optical absorption spectroscopy of single- and few-layer MoS2 by hyperspectral imaging

被引:148
|
作者
Castellanos-Gomez, Andres [1 ]
Quereda, Jorge [2 ]
van der Meulen, Herko P. [3 ]
Agrait, Nicolas [1 ,2 ]
Rubio-Bollinger, Gabino [2 ,4 ]
机构
[1] Inst Madrileno Estudios Avanzados Nanociencia IMD, Madrid 28049, Spain
[2] Univ Autonoma Madrid, Dept Fis Mat Condensada, Cantoblanco, E-28049 Madrid, Spain
[3] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain
[4] Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, E-28049 Madrid, Spain
关键词
molybdenum disulfide (MoS2); hyperspectral imaging; optical properties; spatially resolved; excitons; absorption spectroscopy; 2-DIMENSIONAL SEMICONDUCTORS; VALLEY POLARIZATION; INTEGRATED-CIRCUITS; MONOLAYER; PHOTOLUMINESCENCE; HETEROSTRUCTURES; GENERATION; EMISSION;
D O I
10.1088/0957-4484/27/11/115705
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The possibility of spatially resolving the optical properties of atomically thin materials is especially appealing as they can be modulated at the micro- and nanoscale by reducing their thickness, changing the doping level or applying a mechanical deformation. Therefore, optical spectroscopy techniques with high spatial resolution are necessary to get a deeper insight into the properties of two-dimensional (2D) materials. Here we study the optical absorption of single- and few-layer molybdenum disulfide (MoS2) in the spectral range from 1.24 eV to 3.22 eV (385 nm to 1000 nm) by developing a hyperspectral imaging technique that allows one to probe the optical properties with diffraction limited spatial resolution. We find hyperspectral imaging very suited to study indirect bandgap semiconductors, unlike photoluminescence which only provides high luminescence yield for direct gap semiconductors. Moreover, this work opens the door to study the spatial variation of the optical properties of other 2D systems, including non-semiconducting materials where scanning photoluminescence cannot be employed.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] Optical Identification of Single- and Few-Layer MoS2 Sheets
    Li, Hai
    Lu, Gang
    Yin, Zongyou
    He, Qiyuan
    Li, Hong
    Zhang, Qing
    Zhang, Hua
    [J]. SMALL, 2012, 8 (05) : 682 - 686
  • [2] Spatially resolved raman spectroscopy of single- and few-layer graphene
    Graf, D.
    Molitor, F.
    Ensslin, K.
    Stampfer, C.
    Jungen, A.
    Hierold, C.
    Wirtz, L.
    [J]. NANO LETTERS, 2007, 7 (02) : 238 - 242
  • [3] Photoluminescence of freestanding single- and few-layer MoS2
    Scheuschner, Nils
    Ochedowski, Oliver
    Kaulitz, Anne-Marie
    Gillen, Roland
    Schleberger, Marika
    Maultzsch, Janina
    [J]. PHYSICAL REVIEW B, 2014, 89 (12)
  • [4] Photocatalytic Stability of Single- and Few-Layer MoS2
    Parzinger, Eric
    Miller, Bastian
    Blaschke, Benno
    Garrido, Jose A.
    Ager, Joel W.
    Holleitner, Alexander
    Wurstbauer, Ursula
    [J]. ACS NANO, 2015, 9 (11) : 11302 - 11309
  • [5] Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
    Lee, Changgu
    Yan, Hugen
    Brus, Louis E.
    Heinz, Tony F.
    Hone, James
    Ryu, Sunmin
    [J]. ACS NANO, 2010, 4 (05) : 2695 - 2700
  • [6] Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons
    Kotekar-Patil, Dharmraj
    Deng, Jie
    Wong, Swee Liang
    Goh, Kuan Eng Johnson
    [J]. ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (11) : 2202 - 2207
  • [7] Defect engineering of single- and few-layer MoS2 by swift heavy ion irradiation
    Madauss, Lukas
    Ochedowski, Oliver
    Lebius, Henning
    Ban-d'Etat, Brigitte
    Naylor, Carl H.
    Johnson, A. T. Charlie
    Kotakoski, Jani
    Schleberger, Marika
    [J]. 2D MATERIALS, 2017, 4 (01):
  • [8] Strain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices
    Quereda, Jorge
    Jose Palacios, Juan
    Agrait, Nicolas
    Castellanos-Gomez, Andres
    Rubio-Bollinger, Gabino
    [J]. 2D MATERIALS, 2017, 4 (02):
  • [9] Reduced Dielectric Screening and Enhanced Energy Transfer in Single- and Few-Layer MoS2
    Prins, Ferry
    Goodman, Aaron J.
    Tisdale, William A.
    [J]. NANO LETTERS, 2014, 14 (11) : 6087 - 6091
  • [10] Large-scale arrays of single- and few-layer MoS2 nanomechanical resonators
    Jia, Hao
    Yang, Rui
    Nguyen, Ariana E.
    Alvillar, Sahar Naghibi
    Empante, Thomas
    Bartelsb, Ludwig
    Feng, Philip X. -L.
    [J]. NANOSCALE, 2016, 8 (20) : 10677 - 10685