Preparation of Nb/Al-AlOx/Nb Josephson junctions with critical current densities down to 1 A/cm2

被引：14
|
作者：
Fritzsch, L [1 ]
Kohler, HJ [1 ]
Thrum, F [1 ]
Wende, G [1 ]
Meyer, HG [1 ]
机构：
[1] Inst Phys High Technol, Dept Cryoelect, D-07702 Jena, Germany
来源：
PHYSICA C | 1998年 / 296卷 / 3-4期
关键词：
Josephson junctions; critical current density; ultraviolet light irradiation; voltage standard;
D O I：
10.1016/S0921-4534(97)01829-7
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new method For preparing Nb/Al-AlOx/Nb Josephson junctions with very low critical current densities is reported. an ultraviolet light assisted aluminum oxidation process in pure oxygen atmosphere. A better reproducibility of the critical current density of the junctions is reached in comparison to junctions prepared by the double oxidation technique. Series arrays of Josephson tunnel junctions with up to 960 junctions are produced and tested for Josephson voltage standard applications. The thickness of the aluminum oxide barrier is determined by Rutherford backscattering spectrometry and is compared with the results of specific capacitance measurements. (C) 1998 Elsevier Science B.V.
引用
收藏
页码：319 / 324
页数：6
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