1.5 μm up-conversion device

被引：44
|
作者：
Liu, HC [1 ]
Gao, M [1 ]
Poole, PJ [1 ]
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 15期
关键词：
D O I：
10.1049/el:20000915
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An epitaxially integrated 1.5 to 1 mu m up-conversion device is reported. The device consists of a serially connected In(0.53)Ga(0.47)AS photodiode and InAs0.1P0.9 light emitting diode, grown on InP. The device operation relies first on detecting a 1.5 mu m signal by the photodiode and secondly on driving the emitter by the resulting photocurrent, thus achieving the upconversion.
引用
收藏
页码：1300 / 1301
页数：2
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