Using an injection-locked diode laser to pump a CW Raman laser

被引：9

作者：

Roos, PA ^{[1
]}

Meng, LS ^{[1
]}

Carlsten, JL ^{[1
]}

机构：

[1] Montana State Univ, Dept Phys, Bozeman, MT 59717 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2000年 / 36卷 / 11期

基金：

美国国家科学基金会;

关键词：

continuous wave; frequency conversion; high finesse cavity; injection-locked oscillator; laser resonator; Raman lasers; semiconductor lasers; threshold;

D O I：

10.1109/3.890271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the use of an injection-locked diode laser (792 nm) as the pump source for a continuous-wave (CW) Raman laser with Stokes emission at 1182 nm, Phase modulation of the master signal is imparted to the slave laser output in order to generate an error signal for phase/frequency locking via the Pound-Drever-Hall method, To illustrate the utility of this technique, we achieve the highest pump rate yet observed for a CW Raman laser (>90 times threshold) and compare the data to the existing theory We also show how current modulation of the slave laser can eliminate the need for an electrooptic modulator in the system altogether.

引用

页码：1280 / 1283

页数：4

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