The Electrical Properties of Au/P3HT/n-Type Si Schottky Barrier Diode

被引：0

作者：

Asimov, A. ^{[1
]}

Ahmetoglu, M. ^{[1
]}

Kirsoy, A. ^{[1
,2
]}

Ozer, M. ^{[1
]}

Yasin, M. ^{[3
]}

机构：

[1] Uludag Univ, Fac Sci & Arts, Dept Phys, TR-46059 Bursa, Gorukle, Turkey

[2] Turkish Air Force Acad, TR-34149 Istanbul, Yesilyurt, Turkey

[3] Gebze Inst Technol, Dept Phys, TR-41400 Gebze, Kocaeli, Turkey

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2016年 / 11卷 / 02期

关键词：

Schottky Barrier Diode; Conducting Polymers; Ideality Factor; P3HT; Series Resistance; SERIES RESISTANCE; INTERFACE STATES; DEGRADATION; PARAMETERS; FREQUENCY;

D O I：

10.1166/jno.2016.1881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the electrical properties of the Au/P3HT/n-Si Schottky diode. The ideality factor n and barrier height Phi(b0) values of the diode were found to be 3.40 and Phi(b0) = 0.71 eV, respectively. n ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde method were compared, and it was seen that there was an agreement with each other. We obtained that the high frequency capacitance does not make an important contribution to the total capacitance. Also we have been determined barrier heights increasing with increasing frequency.

引用

页码：214 / 218

页数：5

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