Modeling multiterminal spintronic devices

被引:1
|
作者
Wang, Chao [1 ]
Shi, Qinwei
Wang, Xiaoping
Chen, Jie
机构
[1] Brown Univ, Div Engn, Providence, RI 02912 USA
[2] Hefet Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
[3] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
[4] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2V4, Canada
[5] Natl Inst Nanotechnol, Edmonton, AB T6G 2V4, Canada
基金
加拿大自然科学与工程研究理事会; 中国国家自然科学基金;
关键词
Green's function; multiterminal spin devices; PACS numbers; spin logic gates; spintronics;
D O I
10.1109/TNANO.2007.893574
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We are encountering tremendous opportunities and challenges in combining emerging nanotechnology for developing nanoelectronic devices. Researchers are designing nanoelectronic circuits based on newly discovered nanoscale building blocks, such as spintronic devices. In this paper, we calculate conductance in spintronic gates using the nonequilibrium Green's function and show useful operations for "multiterminal" logic gates. These spintronic devices can be used to design complicated spin circuits.
引用
收藏
页码:309 / 315
页数:7
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