Normal and superconducting state properties of doped CePt3Si

被引:2
|
作者
Kim, J. S. [1 ]
Mixson, D. J. [1 ]
Burnette, D. J. [1 ]
Stewart, G. R. [1 ]
机构
[1] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
关键词
non-Fermi liquid; superconductivity; quantum critical point;
D O I
10.1007/s10909-007-9304-2
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on X-ray powder diffraction, magnetic susceptibility, electrical resistivity, and specific heat measurements on samples of Ce1-xLaxPt3Si and CePt3Si1+delta in order to better understand this unusual heavy Fermion superconductor's normal and superconducting state properties. By suppressing the antiferromagnetic transition, T-N = 2.2 K, using La-doping on the Ce-site in CePt3Si, we find that in Ce1-xLaxPt3Si, x >= 0.8, rho, chi, and C/T show non-Fermi liquid temperature dependences. C/T similar to T-alpha with alpha similar to 1 for the temperature range of 0.3-3 K while low-temperature (2-20 K) susceptibility data follow 1/chi-1/chi(0) = aT(eta) behavior with eta = 0.36. In addition, chi and C/T exhibit single-ion behavior in this composition range (x >= 0.8), i.e. the measured values expressed per Ce-mole are independent of x. Via doping the Si-site with a small excess-2-4-of Si, we present specific heat data for the bulk superconducting transition at T-c similar to 0.8 K showing that this excess sharpens the transition, obviating the need for annealing. Measurements of the X-ray diffraction patterns, rho, chi, and C/T of these CePt3Si1+delta samples, when compared to similar measurements on annealed CePt3Si samples, indicate that the microscopic mechanism for the strengthening and sharpening of Delta C(T-c) with Si-excess may be similar to that responsible in the annealed material.
引用
收藏
页码:135 / 146
页数:12
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