Rectification behaviour of molecular layers on Si(111)

被引：5
|
作者：
Hallbaeck, Ann-Sofie
Poelsema, Bene
Zandvliet, Harold J. W.
机构：
[1] Univ Twente, Fac Appl Phys, Solid State Phys Grp, NL-7500 AE Enschede, Netherlands
[2] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
来源：
SOLID STATE COMMUNICATIONS | 2007年 / 141卷 / 12期
关键词：
semiconductors; thin films; surfaces and interfaces; scanning tunnelling microscopy;
D O I：
10.1016/j.ssc.2007.01.015
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Reproducible and strong diode-like behaviour is observed for molecular films of 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) on n-type Si(111)-7 x 7 surfaces studied by scanning tunnelling microscopy (STM) and spectroscopy (STS) at 77 K. The mechanism behind the rectification is likely to be related to the electron distribution at the molecule-silicon interface. We suggest that the adsorption of the molecular layer profoundly modifies the electronic structure of the Si(111)-7 x 7 surface. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：645 / 648
页数：4
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