Mixed-mode device simulation

被引:28
|
作者
Grasser, T [1 ]
Selberherr, S [1 ]
机构
[1] Tech Univ Vienna, Inst Microelect, A-1040 Vienna, Austria
来源
MICROELECTRONICS JOURNAL | 2000年 / 31卷 / 11-12期
关键词
mixed-mode device simulation; compact modeling; electro-thermal problems;
D O I
10.1016/S0026-2692(00)00083-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the stateof-the-art mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electro-thermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:873 / 881
页数:9
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