Investigation of electronic transitions in semiconductors with pulsed electrically detected magnetic resonance

被引：4
|
作者：
Boehme, C [1 ]
Lips, K [1 ]
机构：
[1] Hahn Meitner Inst Berlin GmbH, Abt Silizium Photovolta, D-12489 Berlin, Germany
来源：
APPLIED MAGNETIC RESONANCE | 2004年 / 27卷 / 1-2期
关键词：
D O I：
10.1007/BF03166306
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
A short review is given on pulsed electrically detected magnetic resonance (pulsed EDMR), a highly sensitive method for the investigation of spin-dependent transport and recombination mechanisms in semiconductors. Pulsed EDMR is based on the transient detection of spin-dependent recombination in a coherent time domain by means of the photoconductivity response after the application of a short electron spin resonance (ESR) pulse. Pulsed EDMR is about 8 to 9 orders of magnitude more sensitive than ESR and highly selective and it gives access to quantitative information such as transition probabilities for the electronic states involved. The theoretical and experimental foundations of the time-domain measurement of spin-dependent charge carrier recombination with pulsed EDMR are given and experimental results are discussed.
引用
收藏
页码：109 / 122
页数：14
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