Ultrafast terahertz Faraday rotation in graphene

被引：8
|
作者：
Heyman, J. N. [1 ]
Kune, R. F. Foo [1 ]
Alebachew, B. A. [1 ]
Nguyen, M. D. [1 ]
Robinson, J. T. [2 ]
机构：
[1] Macalester Coll, St Paul, MN 55105 USA
[2] Naval Res Lab, Washington, DC 20375 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 21期
基金：
美国国家科学基金会;
关键词：
CARRIER DISTRIBUTIONS; DYNAMICS; CONDUCTIVITY; RELAXATION; LAYER;
D O I：
10.1063/1.4903212
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Terahertz (THz) Faraday rotation measurements were performed to investigate carrier dynamics in p-type Chemical vapor deposition (CVD) graphene. We used static and time-resolved polarization-sensitive THz transmission measurements in a magnetic field to probe free carriers in GaAs, InP, and Graphene. Static measurements probe the equilibrium carrier density and momentum scattering rate. Time-resolved (optical pump/THz probe) measurements probe the change in these quantities following photoexcitation. In a typical CVD graphene sample, we found that 0.5 ps following photoexcitation with 1 x 10(13) photons/cm(2) pulses at 800nm the effective hole scattering time decreased from 37 fs to 34.5 fs, while the carrier concentration increased from 2.0 x 10(12) cm(-2) to 2.04 x 10(12) cm(-2), leading to a transient decrease in the conductivity of the film. (C) 2014 AIP Publishing LLC.
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页数：5
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