Silicon micro-structuring using ultra-short laser pulses

被引:6
|
作者
Zhu, JT [1 ]
Li, W [1 ]
Zhao, M [1 ]
Yin, G [1 ]
Chen, X [1 ]
Chen, DY [1 ]
Zhao, L [1 ]
机构
[1] Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
关键词
ultra-short laser pulse; laser material processing; surface modification of solid; optical absorption;
D O I
10.1117/12.571965
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Microstructures develop spontaneously on silicon surface under the cumulative short laser pulses irradiation in different ambient atmospheres. The experimental results suggest that the ambient atmospheres and the laser pulse duration play key roles on the microstructures formation. Only in SF6 ambient, the sharp conical spikes develop. Under the picosecond laser irradiation, silicon surface is melted before the spike arrays formed, while under the femtosecond laser irradiation, the formation of spike array does not pass through the liquid phase. The optical absorption increases remarkably from ultraviolet (similar to 0.25 mu m) to the infrared (similar to 19 mu m) for the microstructured silicon material, which promises for new device applications, such as solar cells, infrared photo-detector.
引用
收藏
页码:276 / 283
页数:8
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