Structural and optical properties of InAs quantum dots in AlGaAs matrix

被引：8

作者：

Sizov, DS ^{[1
]}

Samsonenko, YB ^{[1
]}

Tsyrlin, GE ^{[1
]}

Polyakov, NK ^{[1
]}

Egorov, VA ^{[1
]}

Tonkikh, AA ^{[1
]}

Zhukov, AE ^{[1
]}

Mikhrin, SS ^{[1
]}

Vasil'ev, AP ^{[1
]}

Musikhin, YG ^{[1
]}

Tsatsul'nikov, AF ^{[1
]}

Ustinov, VM ^{[1
]}

Ledentsov, NN ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 05期

关键词：

D O I：

10.1134/1.1575361

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Structural and optical properties of InAs quantum dots (QDs) grown in a wide-bandgap Al0.3Ga0.7As matrix is studied. It is shown that a high temperature stability of optical properties can be achieved owing to deep localization of carriers in a matrix whose band gap is wider than that in GaAs. Specific features of QD formation were studied for different amounts of deposited InAs. A steady red shift of the QD emission peak as far as similar to1.18 mum with the effective thickness of InAs in Al0.3Ga0.7As increasing was observed at room temperature. This made it possible to achieve a much higher energy of exciton localization than for QDs in a GaAs matrix. To obtain the maximum localization energy, the QD sheet was overgrown with an InGaAs layer. The possibility of reaching the emission wavelength of similar to 1.3 mum is demonstrated. (C) 2003 MAIK "Nauka / Interperiodica".

引用

页码：559 / 563

页数：5

共 50 条

[1] Structural and optical properties of InAs quantum dots in AlGaAs matrix
D. S. Sizov
Yu. B. Samsonenko
G. E. Tsyrlin
N. K. Polyakov
V. A. Egorov
A. A. Tonkikh
A. E. Zhukov
S. S. Mikhrin
A. P. Vasil’ev
Yu. G. Musikhin
A. F. Tsatsul’nikov
V. M. Ustinov
N. N. Ledentsov
[J]. Semiconductors, 2003, 37 : 559 - 563
[2] Matrix effects on the structural and optical properties of InAs quantum dots
Chen, JX
Oesterle, U
Fiore, A
Stanley, RP
Ilegems, M
Todaro, T
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (22) : 3681 - 3683
[3] Structural and optical properties of GaAs/AlGaAs superlattice layer on InAs quantum dots
Jeong, Y
Choi, H
Park, Y
Hwang, S
Yoon, JJ
Lee, J
Leem, JY
Jeon, M
[J]. JOURNAL OF CRYSTAL GROWTH, 2004, 273 (1-2) : 129 - 135
[4] Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
Peng Wang
Wenwu Pan
Xiaoyan Wu
Juanjuan Liu
Chunfang Cao
Shumin Wang
Qian Gong
[J]. Nanoscale Research Letters, 2016, 11
[5] Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
Wang, Peng
Pan, Wenwu
Wu, Xiaoyan
Liu, Juanjuan
Cao, Chunfang
Wang, Shumin
Gong, Qian
[J]. NANOSCALE RESEARCH LETTERS, 2016, 11
[6] Temperature dependent optical properties of InAs/AlGaAs quantum dots
Chen, X
Dawson, P
Godfrey, MJ
Hopkinson, M
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (01): : 107 - 110
[7] Optical properties of InAlAs quantum dots in an AlGaAs matrix
Tsatsul'nikov, AF
Egorov, AY
Kop'ev, PS
Kovsh, AR
Ledentsov, NN
Maximov, MV
Suvorova, AA
Ustinov, VM
Volovik, BV
Zhukov, AE
Grundmann, M
Bimberg, D
Alferov, ZI
[J]. APPLIED SURFACE SCIENCE, 1998, 123 : 381 - 384
[8] Optical properties of InAs quantum dots in a Si matrix
Heitz, R
Ledentsov, NN
Bimberg, D
Egorov, AY
Maximov, MV
Ustinov, VM
Zhukov, AE
Alferov, ZI
Cirlin, GE
Soshnikov, IP
Zakharov, ND
Werner, P
Gösele, U
[J]. PHYSICA E, 2000, 7 (3-4): : 317 - 321
[9] Optical properties of InAs quantum dots in a Si matrix
Heitz, R
Ledentsov, NN
Bimberg, D
Egorov, AY
Maximov, MV
Ustinov, VM
Zhukov, AE
Alferov, ZI
Cirlin, GE
Soshnikov, IP
Zakharov, ND
Werner, P
Gösele, U
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (12) : 1701 - 1703
[10] Optical properties of InAs quantum dots with InAlAsInGaAs composite matrix
[J]. Liu, W.-S., 1600, American Institute of Physics Inc. (97):

← 1 2 3 4 5 →