Cadmium free high efficiency Cu2ZnSn(S, Se)4 solar cell with Zn1-xSnxOy buffer layer

We have investigated the simulation approach of a one-dimensional online simulator named A Device Emulation Program and Tool dADEPT 2: 1) and the device performances of a thin film solar cell based on Cu2ZnSn(S; Se)(4) (CZTSSe) absorber have been measured. Initiating with a thin film photovoltaic device structure consisting of n-ZnO : Al/i-ZnO/Zn1-xSnxOy (ZTO)/CZTSSe/Mo/SLG stack, a graded space charge region (SCR) and an inverted surface layer (ISL) were inserted between the buffer and the absorber. The cadmium (Cd) free ZTO buffer, a competitive substitute to the CdS buffer, significantly contributes to improve the open-circuit voltage, V-oc without deteriorating the short-circuit current density, J(sc). The optimized solar cell performance parameters including V-oc, J(sc), fill factor (FF), and efficiency (eta)were calculated from the current density-voltage curve, also known as J-V characteristic curve. The FF was determined as 73.17%, which in turns, yields a higher energy conversion efficiency of 14:.09%. (C) 2016 Faculty of Engineering, Alexandria University. Production and hosting by Elsevier B.V.