Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor

被引：1
|
作者：
Yu, Hanyeong [1 ]
Shin, Changhwan [1 ]
机构：
[1] Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South Korea
来源：
ELECTRONICS | 2021年 / 10卷 / 11期
基金：
新加坡国家研究基金会;
关键词：
ferroelectric; PZT capacitor; polarization; rapid thermal annealing (RTA); PB(ZR; TI)O-3; THIN-FILMS; NEGATIVE CAPACITANCE; P(VDF0.75-TRFE0.25);
D O I：
10.3390/electronics10111324
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
A metal-ferroelectric-metal (MFM) capacitor was fabricated to investigate the effect of the rate-of-change of temperature in the rapid thermal annealing (RTA) process on the physical properties of the MFM capacitor's ferroelectric layer [lead zirconate oxide (PZT)]. Remnant polarization (2 x P-r) is measured and monitored while performing the RTA process at 500 degrees C-700 degrees C. It turned out that, for a given target/final temperature in the RTA process, 2P(r) of the ferroelectric layer decreases with a higher rate-of-change of temperature. This can provide a way to adjust the properties of the PZT layer, depending on the RTA process condition (i.e., using various rate-of-changes of temperature) for a given final/target temperature.
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页数：6
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