Datta-Das transistor for atomtronic circuits using artificial gauge fields

被引:3
|
作者
Madasu, Chetan Sriram [1 ,2 ]
Hasan, Mehedi [1 ,2 ,4 ]
Rathod, Ketan Damji [3 ]
Kwong, Chang Chi [1 ,2 ]
Wilkowski, David [1 ,2 ,3 ,5 ]
机构
[1] Nanyang Technol Univ, Sch Phys & Math Sci, 21 Nanyang Link, Singapore 637371, Singapore
[2] Nanyang Technol Univ, Natl Univ Singapore, Sorbonne Univ, Univ Cote Azur,CNRS,IRL 3654,Majulab,Int Joint Res, Singapore, Singapore
[3] Natl Univ Singapore, Ctr Quantum Technol, Singapore 117543, Singapore
[4] Univ Cambridge, Cavendish Lab, Cambridge CB3, England
[5] Bennett Univ, Greater Noida 201310, India
来源
PHYSICAL REVIEW RESEARCH | 2022年 / 4卷 / 03期
关键词
713.4 Pulse Circuits - 714.2 Semiconductor Devices and Integrated Circuits - 741.1 Light/Optics - 744.1 Lasers; General - 744.8 Laser Beam Interactions - 931.3 Atomic and Molecular Physics - 931.4 Quantum Theory; Quantum Mechanics;
D O I
10.1103/PhysRevResearch.4.033180
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Spin-dependent electrical injection has found useful applications in storage devices, but fully operational spin-dependent semiconductor electronics remain a challenging task because of weak spin-orbit couplings and/or strong spin relaxations. These limitations are lifted considering atoms instead of electrons or holes as spin carriers. In this emerging field of atomtronics, we demonstrate the equivalent of a Datta-Das transistor using a degenerate Fermi gas of strontium atoms as spin carriers in interaction with a tripod laser-beams scheme. We explore the dependence of spin rotation, and we identify two key control parameters which we interpret as equivalent to the gate-source and drain-source voltages of a field effect transistor. Our finding broadens the spectrum of atomtronics devices for implementation of operational spin-sensitive circuits.
引用
收藏
页数:7
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