Composition-ratio control of CuInS2 films using PLD

被引：0
|
作者：
Wakita, Kazuki [1 ]
Po-Han, Tseng [1 ]
Yoshida, Ryo [1 ]
Kyan, Issei [1 ]
Shim, Yong-Gu [2 ]
机构：
[1] Chiba Inst Technol, Dept Elect & Elect Engn, 2-17-1 Tsudanuma, Narashino, Chiba 2750016, Japan
[2] Osaka Prefecture Univ, Dept Phys & Elect, Naka Ku, 1-1 Gakuencho, Sakai, Osaka 5998531, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 6 | 2017年 / 14卷 / 06期
关键词：
confocal microscopy system; CuInS2; epitaxial; photoluminescence; pulse-laser-deposition;
D O I：
10.1002/pssc.201600213
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A sulfur-annealing treatment was investigated to control the sulfur content of epitaxial CuInS2 films grown on GaAs substrate by PLD. The sulfur-annealing treatment improved the surface roughness and film crystallinity. Photoluminescence measurements obtained using the confocal micro-spectroscopy demonstrated that the annealed films show band-edge emissions over a very large area. Electron-probe microanalysis measurements indicated that the sulfur content of the annealed films was about 50 at.%, and the content of the emission area was more than 50 at.%. Therefore, the sulfur content of epitaxial CuInS2 films was successfully controlled by the sulfur-annealing treatment. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数：4
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