Investigation of the high temperature stability of TiN-Al2O3-TiN capacitors for sub 50nm deep trench DRAM

被引：0
|
作者：
Boescke, T. [1 ,2 ]
Kudelka, S. [1 ]
Saenger, A. [1 ]
Mueller, J. [2 ]
Krautschneider, W. [2 ]
机构：
[1] Qimonda GmbH, Dresden, Germany
[2] Tech Univ Hamburg, Hamburg, Germany
来源：
ESSDERC 2006: PROCEEDINGS OF THE 36TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2006年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper deals with the investigation of mechanisms leading to a degradation of the electrical properties of titanium nitride - aluminum oxide - titanium nitride capacitors at high temperatures. Several degradation mechanisms could be identified by thorough electrical and physical characterization. The findings will serve as a future guide to build thermally stable MIM capacitors.
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页码：391 / +
页数：2
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