Effect of surface orientation on the growth and properties of Cu(In,Ga)Se2

被引：4
|
作者：
Liao, DX [1 ]
Rockett, A [1 ]
机构：
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
来源：
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年
关键词：
D O I：
10.1109/PVSC.2002.1190615
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The effects of surface orientation on growth from the vapor phase and properties of Cu(In,Ga)Se-2 on GaAs (001), (111)B, (111)A, and (110) are discussed. Faceting was observed on CIGS on GaAs (110), resulting in two polar (112) facet types with strikingly different surface morphologies. The {112}(Se) surface is assigned as the growth front, while growth on {112}(Metal) planes is relatively slow. A study of CIGS on GaAs (111)A and (111)B substrates was carried out and we present a growth model based on the results. The possible surface reconstructions, chemical compositions and the electronic structures of the two {112} surfaces have been investigated and are discussed in the context of CdS/CIGS interfaces and device performances.
引用
收藏
页码：515 / 518
页数：4
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