Boron implantation doping of diamond

被引:7
|
作者
Ittermann, B [1 ]
Bharuth-Ram, K
Metzner, H
Fullgrabe, M
Heemeier, M
Kroll, F
Mai, F
Marbach, K
Meier, P
Peters, D
Thiess, H
Ackermann, H
Stockmann, HJ
Sellschop, JPF
机构
[1] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany
[2] Univ Durban Westville, Dept Phys, ZA-4000 Durban, South Africa
[3] Univ Gottingen, Inst Phys 2, D-37073 Gottingen, Germany
[4] Univ Witwatersrand, ZA-2050 Wits, Johannesburg, South Africa
关键词
D O I
10.1063/1.120472
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spin polarized B-12 nuclei were produced in B-11(d,p)B-12 nuclear reaction and recoil implanted into a type Ib diamond sample at doses below 10(11) cm(-2). beta-radiation detected nuclear magnetic resonance spectra were measured directly after implantation at sample temperatures ranging from 300 to 800 K. The polarization asymmetry at the Larmor resonance yielded fractions of boron ions at sites of full tetrahedral symmetry of 12(1)% at 300 K, increasing to 17(2)% at 800 K. It is argued that these boron atoms are incorporated substitutionally by direct replacement collisions during the implantation process, The resonance spectra also showed additional boron at low-symmetry sites. (C) 1997 American Institute of Physics. [S0003-6951(97)01551-9].
引用
收藏
页码:3658 / 3660
页数:3
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