Reply to Comments by Ortiz-Conde et al.

被引：0

作者：

Kim, Gun-Hee ^{[1
]}

Bae, Hagyoul ^{[1
]}

Hur, Jae ^{[1
]}

Kim, Choong-Ki ^{[2
]}

Lee, Geon-Bum ^{[3
]}

Bang, Tewook ^{[2
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea

[2] SK Hynix Inc, Icheon 17336, South Korea

[3] Korea Adv Inst Sci & Technol, Elect Engn Dept, Daejeon 34141, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 09期

关键词：

Drain resistance; extrinsic resistance; high-k metal gate (HKMG) MOSFET; intrinsic resistance; parasitic resistance; separate extraction; series resistance; source resistance; SOURCE RESISTANCES; THRESHOLD VOLTAGE; MOSFETS; DRAIN; DIFFERENCE; EXTRACTION; PARAMETERS;

D O I：

10.1109/TED.2018.2859306

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this response, we show that the paper by Kim et al. by our group has a different research purpose and uses different modeling processes, which was not described in the previous work by Ortiz-Conde et al. The comments issued by Ortiz-Conde et al., who claim that our paper corresponds to a particular case of their previous work, are in our opinion overgeneralized. Differences compared to Ortiz-Conde's previous work are discussed in detail. We also explain how the problem on threshold voltage pointed out by Ortiz-Conde et al. can be solved through a semiempirical method from measured data.

引用

页码：4022 / 4024

页数：3

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