Near-Infrared Photodetector Based on MoS2/Black Phosphorus Heterojunction

Two-dimensional (2D) materials present their excellent properties in electronic and optoelectronic applications, including in ultrafast carrier dynamics, layer-dependent energy bandgap, tunable optical properties, low power dissipation, high mobility, transparency, flexibility, and the ability to confine electromagnetic energy to extremely small volumes. Herein, we demonstrate a photodetector with visible to near-infrared detection range, based on the heterojunction fabricated by van der Waals assembly between few-layer black phosphorus (BP) and few-layer molybdenum disulfide (MoS2). Leo 1 The heterojunction with electrical characteristics which can be electrically tuned by a gate voltage achieves a wide range of current-rectifying behavior with a forward-to-reverse bias current ratio exceeding 10(3). The photoresponsivity (R) of the photodetector is about 22.3 A W-1 measured at lambda = 532 nm and 153.4 mA W-1 at lambda = 1.55 mu m with a microsecond response speed (15 mu s). In addition, its specific detectivity D* is calculated to have the maximum values of 3.1 x 10(11) Jones at lambda = 532 nm, while 2.13 x 10(9) Jones at lambda = 1550 nm at room temperature.