Characterization of InAs/GaAs quantum dots utilizing THz time-domain spectroscopy

被引：0
|
作者：
Oh, S. J. [1 ]
Kang, C. [1 ]
Maeng, I. H. [1 ]
Cho, N. K. [2 ]
Song, J. D. [2 ]
Choi, W. J. [2 ]
Lee, J. I. [2 ]
Son, J. -H. [1 ]
机构：
[1] Univ Seoul, Dept Phys, Seoul 130743, South Korea
[2] Korea Inst Sci & Technol, Seoul, South Korea
来源：
CONFERENCE DIGEST OF THE 2006 JOINT 31ST INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 14TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS | 2006年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the carrier capture behavior of n-type modulation-doped InAs/GaAs QDs using THz time-domain spectroscopy (THz TDS) in order to estimate the total number of electrons captured by the QDs. The THz transmission of the sample with QDs (#1) is larger than that of the sample without QDs (#2). From the THz waveforms and subsequent analysis, the #1 sample shows lower conductivity which is resulted from the smaller number of free carriers due to the capture by the QDs.
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页码：55 / 55
页数：1
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