40 GHz High-Power Photodetector Module

被引：0
|
作者：
Beckerwerth, Tobias [1 ]
Ganzer, Felix [1 ]
Glaesel, Jonas [1 ]
Runge, Patrick [1 ]
Schell, Martin [1 ]
机构：
[1] Fraunhofer Heinrich Hertz Inst, Berlin, Germany
来源：
2020 INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS (MWP 2020) | 2020年
关键词：
photodetector module; uni-travelling carrier photodiode; high output-power; linearity;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate a fully packaged photodetector module based on surface-illuminated modified uni-traveling-carrier (MUTC) photodiode (PD) and investigate its DC and RF characteristics. It has a very a low dark current below 2 nA at the operational reverse bias of 4 V and a responsivity of 0.49 A/W at 1550 nm. The module shows a high f(3dB) bandwidth of 38 GHz for low optical input powers and excellent linearity with RF output power levels of 11.7 dBm at 40 GHz. The power conversion efficiency was 6.7% at 40 GHz making it suitable for RF signal generation.
引用
收藏
页码：33 / 35
页数：3
相关论文
共 50 条
  • [1] High-power photodetector module for 0–16 GHz frequency range
    Arykov V.S.
    Yunusov I.V.
    Stepanenko M.V.
    Zhuravlev K.S.
    Gilinsky A.M.
    Chistokhin I.B.
    Aksenov M.S.
    Dmitriev D.V.
    Applied Physics, 2023, (01): : 38 - 43
  • [2] High-Power Flip-Chip Balanced Photodetector with >40 GHz Bandwidth
    Beling, A.
    Cross, A. S.
    Zhou, Q.
    Fu, Y.
    Campbell, J. C.
    2013 IEEE PHOTONICS CONFERENCE (IPC), 2013, : 352 - 353
  • [3] A High-Power and High-Linearity 50 GHz Waveguide Photodiode Module
    Rouvalis, Efthymios
    Mueller, Philipp
    Fedderwitz, Sascha
    Trommer, Dirk
    Stephan, Jens
    Steffan, Andreas G.
    Unterbrsch, Guenter
    2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC), 2014,
  • [4] High-power Ge photodetector for silicon photonics has a 35 GHz bandwidth
    不详
    LASER FOCUS WORLD, 2016, 52 (07): : 7 - 7
  • [5] High-Power Integrated Balanced Photodetector
    Li, Zhi
    Chen, Hao
    Pan, Huapu
    Beling, Andreas
    Campbell, Joe C.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (24) : 1858 - 1860
  • [6] On-wafer RF high-power measurement with an LSMO load at 40 GHz
    Quinten, T.
    Lampin, J. -F.
    Okada, E.
    Pierron, V.
    Gunther, C.
    Mechin, L.
    Walter, B.
    Guillet, B.
    2023 48TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, IRMMW-THZ, 2023,
  • [7] First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz
    Medjdoub, F.
    Zegaoui, M.
    Grimbert, B.
    Ducatteau, D.
    Rolland, N.
    Rolland, P. A.
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (08) : 1168 - 1170
  • [8] High-power performance of a high-speed photodetector
    Unterbörsch, G
    Trommer, D
    Umbach, A
    Ludwig, R
    Bach, HG
    24TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION, VOL 1-3: VOL 1: REGULAR AND INVITED PAPERS; VOL 2: TUTORIALS AND SYMPOSIUM PAPERS; VOL 3: POSTDEADLINE PAPERS, 1998, : 67 - 68
  • [9] High-Power and High-Linearity Photodetector Module based on a Modified Uni-Traveling Carrier Photodiode
    Rouvalis, Efthymios
    Zhou, Qiugui
    Beling, Andreas
    Cross, Allen S.
    Steffan, Andreas G.
    Campbell, Joe C.
    2013 IEEE INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS (MWP), 2013, : 13 - 16
  • [10] High-Power Ge/Si Waveguide Photodetector
    Cao, Hengzhen
    Xiang, Yuluan
    Sun, Weichao
    Xie, Jin
    Guo, Jingshu
    Yu, Zejie
    Liu, Liu
    Shi, Yaocheng
    Dai, Daoxin
    ACS PHOTONICS, 2024, 11 (04) : 1761 - 1770
12345