Spectroscopic Measurement of Interlayer Screening in Multilayer Epitaxial Graphene

被引：100
|
作者：
Sun, Dong [1 ]
Divin, Charles [1 ]
Berger, Claire [2 ]
de Heer, Walt A. [2 ]
First, Phillip N. [2 ]
Norris, Theodore B. [1 ]
机构：
[1] Univ Michigan Hosp, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
[2] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
来源：
PHYSICAL REVIEW LETTERS | 2010年 / 104卷 / 13期
关键词：
GRAPHITE;
D O I：
10.1103/PhysRevLett.104.136802
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The substrate-induced charge-density profile in carbon face epitaxial graphene is determined using nondegenerate ultrafast midinfrared pump-probe spectroscopy. Distinct zero crossings in the differential transmission spectra are used to identify the Fermi levels of layers within the multilayer stack. Probing within the transmission window of the SiC substrate, we find the Fermi levels of the first four heavily doped layers to be, respectively, 360, 215, 140, and 93 meV above the Dirac point. The charge screening length is determined to be one graphene layer, in good agreement with theoretical predictions.
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