An investigation on the growth and propitiates of KDP admixtured ADP single crystals

被引：6
|
作者：
Iyappan, G. [1 ]
Paulraj, Rajesh [1 ]
Perumalsamy, Ramasamy [1 ]
Maurya, Kamalesh Kumar [2 ]
Rao, Soma Venugopal [3 ]
机构：
[1] SSN Coll Engn, SSN Res Ctr, Dept Phys, Kalavakkam 603110, Tamil Nadu, India
[2] CSIR Natl Phys Lab, New Delhi, India
[3] Univ Hyderabad, Adv Ctr Res High Energy Mat, Hyderabad, Telangana, India
来源：
FERROELECTRICS | 2019年 / 550卷 / 01期
关键词：
ADP-KDP; mixed crystal; optical properties; photoconductivity; piezoelectric materials; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; ENHANCEMENT; PERFECTION; KH2PO4; DAMAGE; ACID;
D O I：
10.1080/00150193.2019.1652505
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ADP:KDP (85:15) mixed crystal was grown using slow cooling technique. The crystalline perfection of the grown crystal was studied using HRXRD curve. The homogeneity of KDP along the length of mixed crystal was analysed. Low Urbach energy value of the grown crystal indicates good crystallinity of the mixed crystals. Etch pit density was found using chemical etching studies. Vickers hardness studies indicate that the quality of the mixed crystal is more stable compared to ADP. The photoconductive nature and piezoelectric coefficient of the crystal were found. The laser stability of the crystal was observed at 532?nm using Nd:YAG laser.
引用
收藏
页码：151 / 172
页数：22
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