Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride

被引：6
|
作者：
Sadakuni, Shun [1 ]
Murata, Junji [1 ]
Yagi, Keita [2 ]
Sano, Yasuhisa [1 ]
Arima, Kenta [1 ]
Hattori, Azusa [3 ]
Okamoto, Takeshi [1 ]
Yamauchi, Kazuto [1 ,3 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Dept Precis Sci & Technol, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan
[2] Ebara Corp, Fujisawa, Kanagawa 251, Japan
[3] Grad Sch Engn, Res Ctr Ultra Precis Sci & Technol, Suita, Osaka 5650871, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷
基金：
日本科学技术振兴机构;
关键词：
catalyst; CMP; etching; photoelectrochemical; polishing; GAN;
D O I：
10.4028/www.scientific.net/MSF.645-648.795
中图分类号：
TB33 [复合材料];
学科分类号：
摘要：
We have developed a novel planarization technique for gallium nitride (GaN) substrates using a photo-electro chemical process and solid acid catalyst. In this method, a GaN surface is oxidized by ultraviolet (UV) light irradiation, and the oxide layer is chemically removed by a solid acid catalyst. In the current work, the dependence of the removal rate on the UV light intensity was investigated.
引用
收藏
页码：795 / +
页数：2
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