Anisotropic g-Factor and Spin-Orbit Field in a Germanium Hut Wire Double Quantum Dot

被引:19
|
作者
Zhang, Ting [1 ,2 ,3 ]
Liu, He [1 ,2 ,3 ]
Gao, Fei [4 ,5 ]
Xu, Gang [1 ,2 ,3 ]
Wang, Ke [1 ,2 ,3 ]
Zhang, Xin [1 ,2 ,3 ]
Cao, Gang [1 ,2 ,3 ]
Wang, Ting [4 ,5 ]
Zhang, Jianjun [4 ,5 ]
Hu, Xuedong [6 ]
Li, Hai-Ou [1 ,2 ,3 ]
Guo, Guo-Ping [1 ,2 ,3 ,7 ]
机构
[1] Univ Sci & Technol China, CAS Key Lab Quantum Informat, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, CAS Ctr Excellence, Hefei 230026, Anhui, Peoples R China
[3] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China
[4] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[5] Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China
[6] Univ Buffalo SUNY, Dept Phys, Buffalo, NY 14260 USA
[7] Origin Quantum Comp Co Ltd, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
Ge hut wires; hole double quantum dot; Pauli spin blockade; spin-orbit interaction; g-tensor; SINGLE-ELECTRON SPIN; BLOCKADE; SUPERCONDUCTOR; RESONANCE; HOLES;
D O I
10.1021/acs.nanolett.1c00263
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes and manipulating spin-orbit qubits. Here, from the strongly anisotropic leakage current in the spin blockade regime for a double dot, we extract the full g-tensor and find that the spin-orbit field is in plane with an azimuthal angle of 59 degrees to the axis of the nanowire. The direction of the spin-orbit field indicates a strong spin-orbit interaction along the nanowire, which may have originated from the interface inversion asymmetry in Ge hut wires. We also demonstrate two different spin relaxation mechanisms for the holes in the Ge hut wire double dot: spin-flip co-tunneling to the leads, and spin-orbit interaction within the double dot. These results help establish feasibility of a Ge-based quantum processor.
引用
收藏
页码:3835 / 3842
页数:8
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