Porous silicon diodes operated near the electroluminescence threshold

被引：2
|
作者：
Lalic, N
Linnros, J
机构：
[1] Department of Electronics, Royal Institute of Technology, S-164 40, Kista-Stockholm
来源：
THIN SOLID FILMS | 1997年 / 297卷 / 1-2期
关键词：
electroluminescence; porous silicon; carrier transport;
D O I：
10.1016/S0040-6090(96)09423-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transient behavior and the onset voltage of the electroluminescence (EL) has been measured for a porous silicon light-emitting diode (PSi LED). Diodes were fabricated by anodization of the pn diode structure with contacts realized by deposition of gold pads. Higher onset voltages of the EL have been found for samples with shorter peak wavelengths. This is attributed to higher injection barriers for those samples, in agreement with a smaller expected average crystallite size. A red-shift of the EL is observed at the voltages near the EL threshold and an EL mechanism based on exciton generation is suggested. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：277 / 280
页数：4
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