High-Power Nd:GdVO4 Innoslab Continuous-Wave Laser under Direct 880 nm Pumping

被引：6
|
作者：
Deng Bo [1 ]
Zhang Heng-Li [1 ]
Xu Liu [1 ]
Mao Ye-Fei [1 ]
He Jing-Liang [2 ]
Xin Jian-Guo [1 ]
机构：
[1] Beijing Inst Technol, Sch Optoelect, Beijing 100081, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250000, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2014年 / 31卷 / 11期
关键词：
SLAB LASER; PERFORMANCE; EMISSION; CRYSTAL; CW;
D O I：
10.1088/0256-307X/31/11/114201
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd:GdVO4 operating at 1063 nm. Diode laser stacks at 880 nm are used to pump Nd: GdVO4 into emitting level F-4(3/2). The 149W output power is presented when the absorbed pump power is 390W and the optical-to-optical conversion efficiency is 38.2%. When the output power is 120 W, the M-2 factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.
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页数：3
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