Structural, electrical properties and photoluminescence analyses of the terbium doped barium titanate

Multifunctional materials integrating optical and electric properties into a composite or into a doped single-phase material have attracted much attention from scientists for future optoelectronic devices. In this work, polycrystalline Ba1-xTbxTiO3, x = 0.00, 0.01 and 0.05 materials were synthesized by hydrothermal route and their photoluminescence and dielectric properties were studied. The as-prepared powders showed a microstructure consisting of grains with the shape of cube; and average particle size ranging from 75 nm to 150 nm. The investigated temperature dependence of dielectric permittivity of Ba1-xTbxTiO3 ceramics revealed a decrease of the Curie temperature (Tc) with increasing terbium content, and a more pronounced degree of diffuseness of phase transition. The resistivity at room temperature was discussed in terms of positive temperature coefficient of resistance (PTRC) effect. UV-vis reflectance spectra of Ba1-xTbxTiO3 samples showed a decrease of the band gap energy with the increase of Tb amount, due to the band-gap narrowing effect. The photoluminescence spectra recorded for Tb doped BaTiO3 materials, at 80 K, evidenced the typical f-f luminescence lines of the Tb3+ accompanied the broad luminescence band at about 425 nm due to self-trapped exciton recombination. These results demonstrated that the terbium enhances the dielectric properties and photoluminescence simultaneously, being suitable for electronic applications. (C) 2021 Elsevier B.V. All rights reserved.