Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design

被引：6
|
作者：
Zhang, Wenliang [1 ]
Zhu, Yangjun [1 ]
Lu, Shuojin [1 ]
Tian, Xiaoli [1 ]
Teng, Yuan [1 ]
机构：
[1] Chinese Acad Sci, Dept Silicon Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 12期
关键词：
Current crowding; reliability; reverse-conducting insulated gate bipolar transistor (RC-IGBT); edge termination; TECHNOLOGY; IGBT;
D O I：
10.1109/LED.2014.2364301
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a novel design concept for the edge termination of reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed and evaluated. The new design can be easily realized by backside layout design without additional processes and manufacturing cost. Simulation results show that the proposed method can reduce the total amount of injected holes by 94.6% and 81.5% in the insulated gate bipolar transistor (IGBT) and diode modes, respectively. Thus, the current crowding problem in the edge termination when RC-IGBT device turns OFF in IGBT mode or recovers in diode mode is suppressed.
引用
收藏
页码：1281 / 1283
页数：3
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