Trapped hole enhanced stress induced leakage currents in NAND EEPROM tunnel oxides

被引：0
|
作者：
Hemink, GJ [1 ]
Shimizu, K [1 ]
Aritome, S [1 ]
Shirota, R [1 ]
机构：
[1] TOSHIBA CO LTD,ULSI RES CTR,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN
来源：
1996 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 34TH ANNUAL | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：117 / 121
页数：3
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