Single oscillator model of undoped and co-doped ZnO thin films

被引：9

作者：

Petkova, P. ^{[1
]}

Nedelchev, L. ^{[2
]}

Nazarova, D. ^{[2
]}

Boubaker, K. ^{[3
]}

Mimouni, R. ^{[4
]}

Vasilev, P. ^{[1
]}

Alexieva, G. ^{[5
]}

Bachvarova, D. ^{[1
]}

机构：

[1] Konstantin Preslavsky Univ Shumen, Fac Nat Sci, Shumen, Bulgaria

[2] Bulgarian Acad Sci, Inst Opt Mat & Technol Acad Jordan Malinovski, Sofia, Bulgaria

[3] Univ Tunis, ESSTT, Mahdia, Tunisia

[4] Univ Tunis, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis, Tunisia

[5] Sofia Univ St Kliment Ohridski, Fac Phys, Solid State Phys & Microelect Dept, James Boucher 5, Sofia 1164, Bulgaria

来源：

OPTIK | 2017年 / 139卷

关键词：

Co-doped ZnO thin films; Single oscillator model; Refractive index; Experimental Lorentz profiles; OPTICAL-PROPERTIES;

D O I：

10.1016/j.ijleo.2017.03.089

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Undoped and co-doped zinc oxide thin films were deposited on glass substrates using a chemical spray technique. The experimental Lorentz profiles of co-doped ZnO thin films were measured in the spectral region 720-1750 nm. A single oscillator model of the resulted materials is constructed by calculation of: zero-frequency refractive index (n(o)), average interband oscillator wavelength (lambda(o)), oscillator strength (S-o), dispersion energy (E-d), single effective oscillator energy (E-o), plasma oscillation frequency (omega(p)) and interband transition strength moments (M-1, M-3). (C) 2017 Elsevier GmbH. All rights reserved.

引用

页码：217 / 221

页数：5

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