Simulation study on Si and Ge film growth by cluster deposition

被引：8
|
作者：
Lu, HW [1 ]
Xie, JQ [1 ]
Feng, JY [1 ]
机构：
[1] Tsing Hua Univ, Dept Mat Sci & Engn, Natl Tribol Lab, Tueduk Gu, Beijing 100084, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 170卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1016/S0168-583X(00)00060-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Si and Ge thin film growth from cluster beams has been investigated with molecular-dynamics simulations utilizing the Stillinger-Weber (SW) two- and three-body interaction potentials. The spreading of cluster atoms and the structure of grown films have been studied as a function of incident cluster velocity. We found that higher surface diffusion and spreading of the deposited clusters, which were achieved with a moderate cluster velocity, are necessary for the epitaxial film. However, a very high cluster velocity leads to the damage of the substrate and the growing films. The substrate temperature also plays an important role in the growth of the films. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：71 / 78
页数：8
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