Growth and excitonic emission of CdSe ultra-thin quantum wells without thickness fluctuations

被引:0
|
作者
Alfaro-Martinez, Adrian [1 ]
Hernandez-Calderon, Isaac [1 ]
机构
[1] CINVESTAV, Dept Phys, Ave IPN 2508, Mexico City 07360, DF, Mexico
来源
关键词
quantum wells; CdSe; excitons; thickness fluctuations;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Due to the cation and anion surface reconstruction properties, one Cd-Se atomic layer epitaxy (ALE) cycle produces a coverage of 0.5 CdSe monolayers. In this work we demonstrate that even when an odd number of cycles are deposited to produce ultra-thin quantum wells, under the appropriate growth conditions, the photolumineseence spectrum indicates the absence of thickness fluctuations. A single excitonic peak is detected in the whole sample.
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页码:95 / +
页数:2
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