The role of hydrogen-bonds for electronic properties in transition-metal compounds

被引：2
|
作者：
Matsushita, E [1 ]
机构：
[1] Gifu Univ, Fac Engn, Gifu 50111, Japan
来源：
FERROELECTRICS | 1997年 / 203卷 / 1-4期
关键词：
hydrogen-bond; transition-metal; electronic properties;
D O I：
10.1080/00150199708012859
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The role of hydrogen-bonds playing for electronic properties is studied from the theoretical viewpoint in two kinds of transition-metal (TM) compounds: halogen-bridged mixed-valence TM-complexes (type I) and perovskite-type hole-doped TM-oxides under hydrogen-containing atmosphere (type II). It is discussed that the correlation among charge-density-wave chains (type I) and the electric conduction (type II) can be controlled by the proton motion on the hydrogen-bonds in these compounds.
引用
收藏
页码：349 / 365
页数：17
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