Monte Carlo Simulation Study of Electron Beam Interaction in Multi-Layered Semiconducting Materials

The Monte Carlo technique is applied to study electron solid interction in multi-layered amorphous solid thin film of silicon carbide (SiC) with resist PMMA. We used electron beams of different initial energies impinging to the solid surface to trace the trajectory of primary electrons suffering scattering with different atoms of the multilayered solid. Our simulation results show the stochastic behavior of the electron paths with different topology inside various thin films of PMMA, SiC and multi-layered PMMA-SiC solids. The decay in electron energy due to scattering as a function of lateral distance is found to be slower as the number of layers increases in both single and multi-layered films. We also found that electron paths spread out more laterally and impinge deeper inside the solid as the energy of the impinging electron increases. The primary electron energy in multi-layered PMMA-SiC as a function of lateral distance is found to decay slower as compared to that in SiC but faster as compared to that in PMMA.