Impact of Neutron-Induced Displacement Damage on the ATREE Response in LM124 Operational Amplifier

被引:8
|
作者
Roig, F. [1 ,2 ]
Dusseau, L. [2 ]
Ribeiro, P. [1 ]
Auriel, G. [1 ]
Roche, N. J-H. [3 ,4 ]
Privat, A. [2 ]
Vaille, J. -R. [2 ]
Boch, J. [2 ]
Saigne, F. [2 ]
Marec, R. [5 ]
Calve, P. [5 ]
Bezerra, F. [6 ]
Ecoffet, R. [6 ]
Azais, B. [7 ]
机构
[1] Commissariat Energie Atom & Energies Alternat, F-46500 Gramat, France
[2] Univ Montpellier 2, CNRS, IES, UMR 5214, F-34097 Montpellier 5, France
[3] US Naval Res Lab, Washington, DC 20375 USA
[4] George Washington Univ, Washington, DC USA
[5] Thales Alenia Space, F-31037 Toulouse 1, France
[6] Ctr Natl Etud Spatiales, F-31401 Toulouse 9, France
[7] Direct Generale Armement, F-92221 Bagneux, France
关键词
Bipolar analog integrated circuits; circuit modeling; displacement damage; total non-ionizing dose; transient radiation effects; transient response; X-ray effects; IONIZING-RADIATION; BIPOLAR; TRANSIENTS; MODEL;
D O I
10.1109/TNS.2014.2365048
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The synergistic effect between displacement damage dose (DDD) and analog transient radiation effects on electronics (ATREE) in an operational amplifier (LM124) (opamp) from three different manufacturers is investigated. Pulsed X-ray experiments have highlighted ATREE sensitivity on devices significantly more important following exposure to fission neutrons than for unirradiated devices. A previously developed simulation tool is used to model ATREE responses taking into account the electrical parameters degradation due to displacement damage phenomenon. A good agreement is observed between model outputs and experimental ATREE results.
引用
收藏
页码:3043 / 3049
页数:7
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