Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization

被引：12

作者：

Herling, F. ^{[1
,2
]}

Morrison, C. ^{[1
,3
]}

Knox, C. S. ^{[1
,4
]}

Zhang, S. ^{[5
]}

Newell, O. ^{[3
]}

Myronov, M. ^{[3
]}

Linfield, E. H. ^{[4
]}

Marrows, C. H. ^{[1
]}

机构：

[1] Univ Leeds, Sch Phys & Astron, Leeds LS2 9TJ, W Yorkshire, England

[2] Humboldt Univ, Inst Phys, Novel Mat Grp, D-12489 Berlin, Germany

[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[4] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9TJ, W Yorkshire, England

[5] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 5, Sheffield S1 4DE, S Yorkshire, England

来源：

PHYSICAL REVIEW B | 2017年 / 95卷 / 15期

基金：

英国工程与自然科学研究理事会;

关键词：

INVERSION-LAYERS; QUANTUM-WELLS; HYBRIDIZATION; GAP;

D O I：

10.1103/PhysRevB.95.155307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the spin-orbit interaction (SOI) in InAs/GaSb and InAs quantum wells. We showthrough temperatureand gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findings with recent work on this material system and show that the SOI length lies within the same range. The SOI length may be controlled using an electrostatic gate, opening up prospects for developing spintronic applications.

引用

页数：6

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