Varistor Effect in Polymer-Semiconductor Composites

被引：17
|
作者：
Kerimov, M. K. [1 ]
Kurbanov, M. A. [1 ]
Sultanahmedova, I. S. [1 ]
Faradzhzade, I. A. [1 ]
Tatardar, F. N. [1 ]
Aliyev, H. S. [2 ]
Yahyaev, F. F. [1 ]
Yusifova, U. V. [1 ]
机构：
[1] Natl Acad Sci Azerbaijan, Inst Phys, AZ-1143 Baku, Azerbaijan
[2] Azerbaijan Tech Univ, AZ-1143 Baku, Azerbaijan
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 07期
关键词：
PVDF; Barrier Height; Versus Characteristic; Silicon Content; Voltage Dependence;
D O I：
10.1134/S1063782610070134
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The formation mechanism of the varistor effect in composites based on polar (polyvinylidene fluoride) and nonpolar (polyethylene, polypropylene) polymers and semiconductors (silicon and germanium) is studied. It is shown that the varistor effect in polymer-semiconductor composites is caused by carrier tunneling transport through the barrier at the phase interface, the parameters of which depend on the voltage, temperature, volume concentration and dispersion of semiconductor particles, and permittivity of composite components.
引用
收藏
页码：904 / 911
页数：8
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