Terahertz Nonlinear Spectroscopy of Free-carriers in Semiconductors

被引：0

作者：

Razzari, L. ^{[1
,2
]}

Blanchard, F. ^{[1
]}

Su, F. H. ^{[3
]}

Sharma, G. ^{[1
]}

Ayesheshim, A. ^{[3
]}

Cocker, T. L. ^{[3
]}

Titova, L. V. ^{[3
]}

Bandulet, H-C ^{[1
]}

Morandotti, R. ^{[1
]}

Kieffer, J-C ^{[1
]}

Ozaki, T. ^{[1
]}

Reid, M. ^{[4
]}

Hegmann, F. A. ^{[3
]}

机构：

[1] Univ Quebec, Adv Laser Light Source, INRS EMT, Varennes, PQ J3X 1S2, Canada

[2] Univ Pavia, Dipartimento Elettr, I-27100 Pavia, Italy

[3] Univ Alberta, Dept Phys, Edmonton, AB T6G2G7, Canada

[4] Univ NE British Columbia, Dept Phys, Prince George, BC V2N4Z9, Canada

来源：

2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 | 2009年

关键词：

INTERVALLEY SCATTERING; OPTICS; GENERATION;

D O I：

10.1109/LEOS.2009.5343386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The nonlinear interaction of intense few-cycle terahertz pulses with free carriers in semiconductors is studied in both n-doped and photoexcited systems. Intervalley scattering is found to cause ultrafast modulation and bleaching of the terahertz absorption.

引用

页码：681 / +

页数：2

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